Search results for "Indium arsenide"
showing 4 items of 4 documents
Ab initio calculations of indium arsenide in the wurtzite phase: structural, electronic and optical properties
2013
Most III-V semiconductors, which acquire the zinc-blende phase as bulk materials, adopt the metastable wurtzite phase when grown in the form of nanowires. These are new semiconductors with new optical properties, in particular, a different electronic band gap when compared with that grown in the zinc-blende phase. The electronic gap of wurtzite InAs at the Gamma-point of the Brillouin zone (E0 gap) has been recently measured, E0 = 0.46 eV at low temperature. The electronic gap at the A point of the Brillouin zone (equivalent to the L point in the zinc-blende structure, E1) has also been obtained recently based on a resonant Raman scattering experiment. In this work, we calculate the band st…
Parallel Recording of Single Quantum Dot Optical Emission Using Multicore Fibers
2016
Single Indium Arsenide Quantum Dot emission spectra have been recorded using a four-core, crosstalk-free, multicore fiber placed at the collection arm of a confocal microscope. We developed two different measurement set-ups depending on the relative configuration of the excitation and collection spots. In the single-matched mode, the emission from the excited area is collected by a single core in the multicore fiber, whereas the three remaining cores capture the emission from neighboring, non-excited areas. This procedure allows for the recording of the Quantum Dot emission from carrier diffusion between sample positions separated by more than 6 μm. In the multiple-matched mode, the ex…
Influence of the InAs coverage on the phonon-assisted recombination in InAs/GaAs quantum dots
2002
6 páginas, 3 figuras.
Two-Color Single-Photon Emission from In As Quantum Dots: Toward Logic Information Management Using Quantum Light
2014
In this work, we propose the use of the Hanbury-Brown and Twiss interferometric technique and a switchable two-color excitation method for evaluating the exciton and noncorrelated electron-hole dynamics associated with single photon emission from indium arsenide (InAs) self-assembled quantum dots (QDs). Using a microstate master equation model we demonstrate that our single QDs are described by nonlinear exciton dynamics. The simultaneous detection of two-color, single photon emission from InAs QDs using these nonlinear dynamics was used to design a NOT AND logic transference function. This computational functionality combines the advantages of working with light/photons input/output device…